Published January 5, 2009 | Version v1
Journal article

Atomic Oxygen Sensors Based on Nanograin ZnO Films Prepared by Pulse Laser Deposition

  • 1. National Key Laboratory of Vacuum and Cryogenics Technology and Physics, Lanzhou Institute of Physics, Lanzhou 730000 (China)

Description

High-quality nanograin ZnO thin films were deposited on c-plane sapphire (Al2O3) substrates by pulse laser deposition (PLD). Scanning electron microscopy (SEM) and x-ray diffraction (XRD) were used to characterize the samples. The structural and morphological properties of ZnO films under different deposition temperature have been investigated before and after atomic oxygen (AO) treatment. XRD has shown that the intensity of the (0 0 2) peak increases and its FWHM value decreases after AO treatment. The AO sensing characteristics of nano ZnO film also has been investigated in a ground-based atomic oxygen simulation facility. The results show that the electrical conductivity of nanograin ZnO films decreases with increasing AO fluence and that the conductivity of the films can be recovered by heating.

Additional details

Identifiers

Publishing Information

Journal Title
AIP Conference Proceedings
Journal Volume
1087
Journal Issue
1
Journal Page Range
p. 455-462
ISSN
0094-243X
CODEN
APCPCS

Conference

Title
9. international conference on protection of materials and structures from space environment
Dates
20-23 May 2008
Place
Toronto, Ontario (Canada)

Optional Information

Notes
(c) 2009 American Institute of Physics