Published November 1998 | Version v1
Book

Correlation between defect and light emission of Si-nanocrystal fabricated by RF sputtering technique

  • 1. Tokai Univ., Hiratsuka, Kanagawa (Japan)

Description

SiO2 films containing Si-nanocrystals were prepared using the RF sputtering technique. Electron spin resonance (ESR) and photoluminescence (PL) measurements on Si-nanocrystals were performed. The ESR analysis revealed the presence of three kinds of ESR centers (a-center: g=2.006, Pb-center: g=2.003, Pce-center: g=1.998) in the film after annealing at 1100degC in argon atmosphere. Visible light emission was observed in the annealed sample. We investigated the correlation between the defect and the light emission of Si-nanocrystal. (author)

Part of:
Proceedings of the ninth symposium on beam engineering of advanced material syntheses

Additional details

Additional titles

Original title (Japanese)
Dai-9-kai ryushisen no sentanteki oyo gijutsu ni kansuru shinpojiumu

Publishing Information

Publisher
IONICS Publishing Corp.
Imprint Place
Tokyo (Japan)
Imprint Title
Proceedings of the ninth symposium on beam engineering of advanced material syntheses
Imprint Pagination
195 p.
Journal Page Range
p. 151-154

Conference

Title
9. symposium on beam engineering of advanced material syntheses
Acronym
BEAMS 1998
Dates
25-26 Nov 1998
Place
Tokyo (Japan)

Optional Information

Notes
Imprint:Dai-9-kai ryushisen no sentanteki oyo gijutsu ni kansuru shinpojiumu