Studies of antimony telluride and copper telluride films electrodeposition from choline chloride containing ionic liquids
Creators
- 1. Department of Inorganic Chemistry, Physical Chemistry and Electrochemistry, POLITEHNICA University of Bucharest, Calea Grivitei 132, Bucharest (Romania)
- 2. INCDIE ICPE-Advanced Research, Splaiul Unirii 313, Bucharest (Romania)
- 3. Center of Surface Science and Nanotechnology, University POLITEHNICA of Bucharest, Splaiul Independentei 313, Bucharest (Romania)
Description
Cyclic voltammetry and electrochemical impedance spectroscopy were used to investigate the deposition of antimony telluride or copper telluride from ionic liquid consisting in mixture of choline chloride with oxalic acid. In addition, the cathodic process during copper telluride formation was studied in the mixture of choline chloride with ethylene glycol. The results indicate that the Pt electrode is first covered with a Te layer, and then the more negative polarisation leads to the deposition of SbxTey or CuxTey semiconductor compounds. Thin films were deposited on copper and carbon steel at 60–70 °C and were characterised by scanning electron microscopy, energy X-ray dispersive spectroscopy (EDS), and X-ray diffraction (XRD). Their stoichiometry depends on the bath composition and applied potential. EDS and XRD patterns indicate the possible synthesis of stoichiometric Sb2Te3 phase and Cu2Te, Cu5Te3, and Cu2.8Te2 phases, respectively, by controlling the ratio of ion concentrations in ionic liquid electrolytes and deposition potential. - Highlights: • SbxTey and CuxTey films electrodeposited from choline-chloride-based ionic liquids. • The stoichiometry of film depends on the bath composition and deposition potential. • Sb2Te3, Cu2Te, Cu5Te3, Cu2.8Te2 phases were identified in X-ray diffraction patterns.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.tsf.2016.04.030Additional details
Identifiers
- DOI
- 10.1016/j.tsf.2016.04.030;
- PII
- S0040-6090(16)30099-2;
Publishing Information
- Journal Title
- Thin Solid Films
- Journal Volume
- 611
- Journal Page Range
- p. 88-100
- ISSN
- 0040-6090
- CODEN
- THSFAP
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 48020986
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ANTIMONY TELLURIDES; CARBON; CARBON STEELS; CONCENTRATION RATIO; COPPER; COPPER TELLURIDES; ELECTROCHEMISTRY; ELECTRODEPOSITION; ELECTROLYTES; GLYCOLS; IMPEDANCE; OXALIC ACID; POLARIZATION; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR MATERIALS; SYNTHESIS; THIN FILMS; VOLTAMETRY; X-RAY DIFFRACTION; X-RAY SPECTROSCOPY
- Descriptors DEC
- ALCOHOLS; ALLOYS; ANTIMONY COMPOUNDS; CARBON ADDITIONS; CARBOXYLIC ACIDS; CHALCOGENIDES; CHEMISTRY; COHERENT SCATTERING; COPPER COMPOUNDS; DEPOSITION; DICARBOXYLIC ACIDS; DIFFRACTION; DIMENSIONLESS NUMBERS; ELECTROLYSIS; ELECTRON MICROSCOPY; ELEMENTS; FILMS; HYDROXY COMPOUNDS; IRON ALLOYS; IRON BASE ALLOYS; LYSIS; MATERIALS; METALS; MICROSCOPY; NONMETALS; ORGANIC ACIDS; ORGANIC COMPOUNDS; SCATTERING; SPECTROSCOPY; STEELS; SURFACE COATING; TELLURIDES; TELLURIUM COMPOUNDS; TRANSITION ELEMENT ALLOYS; TRANSITION ELEMENT COMPOUNDS; TRANSITION ELEMENTS
Optional Information
- Copyright
- Copyright (c) 2016 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.