Published April 30, 1999
| Version v1
Journal article
Nonlinear structures in a wide-aperture semiconductor interferometer when stimulated recombination is important
Creators
- 1. Institute of Radio Engineering and Electronics, Russian Academy of Sciences, Moscow (Russian Federation)
Description
Concentration - field structures made up of periodically arranged or solitary layers in a thin nonlinear wide-aperture semiconductor interferometer were examined in the range of pumping rates in which stimulated recombination of electrons and holes plays a significant role. It is shown that, after attainment of the threshold concentration in the layers, the latter become microlasers for the transverse wave modes of the interferometer. (nonlinear optical phenomena)
Availability note (English)
Available from http://dx.doi.org/10.1070/QE1999v029n04ABEH001485Additional details
Identifiers
Publishing Information
- Journal Title
- Quantum Electronics (Woodbury, N.Y.)
- Journal Volume
- 29
- Journal Issue
- 4
- Journal Page Range
- p. 347-350
- ISSN
- 1063-7818
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 42035071
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- APERTURES; ELECTRICAL PUMPING; ELECTRONS; HOLES; INTERFEROMETERS; NONLINEAR OPTICS; PERIODICITY; RECOMBINATION; SEMICONDUCTOR MATERIALS
- Descriptors DEC
- ELEMENTARY PARTICLES; FERMIONS; LEPTONS; MATERIALS; MEASURING INSTRUMENTS; OPENINGS; OPTICS; PUMPING; VARIATIONS