Published April 30, 1999 | Version v1
Journal article

Nonlinear structures in a wide-aperture semiconductor interferometer when stimulated recombination is important

  • 1. Institute of Radio Engineering and Electronics, Russian Academy of Sciences, Moscow (Russian Federation)

Description

Concentration - field structures made up of periodically arranged or solitary layers in a thin nonlinear wide-aperture semiconductor interferometer were examined in the range of pumping rates in which stimulated recombination of electrons and holes plays a significant role. It is shown that, after attainment of the threshold concentration in the layers, the latter become microlasers for the transverse wave modes of the interferometer. (nonlinear optical phenomena)

Availability note (English)

Available from http://dx.doi.org/10.1070/QE1999v029n04ABEH001485

Additional details

Publishing Information

Journal Title
Quantum Electronics (Woodbury, N.Y.)
Journal Volume
29
Journal Issue
4
Journal Page Range
p. 347-350
ISSN
1063-7818

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
42035071
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
APERTURES; ELECTRICAL PUMPING; ELECTRONS; HOLES; INTERFEROMETERS; NONLINEAR OPTICS; PERIODICITY; RECOMBINATION; SEMICONDUCTOR MATERIALS
Descriptors DEC
ELEMENTARY PARTICLES; FERMIONS; LEPTONS; MATERIALS; MEASURING INSTRUMENTS; OPENINGS; OPTICS; PUMPING; VARIATIONS