Progresses in cMUT device fabrication using low temperature processes
- 1. Université François Rabelais, Tours, GREMAN, CNRS-UMR 7347, 16 rue Pierre et Marie Curie, BP 7155, 37071 Tours Cedex 2 (France)
Description
In this paper, we present an original fabrication process of capacitive micromachined ultrasonic transducers (cMUTs) using a low temperature method for high frequency medical imaging applications. The process, which is limited to 400 °C, is based on surface micromachining. The material choices are adapted in order to respect the thermal specifications allowing monolithic integration. Thus, we have found alternative methods to replace the usual high temperature steps in cMUT elaboration. In this way, a nickel silicide layer, presenting good physical and electrical characteristics, is used as a bottom electrode. The membrane, silicon nitride, is deposited using a 200 °C PECVD process. Then, a metallic layer is chosen as a sacrificial layer, in order to achieve the cavity. For that, nickel has been chosen due to its low roughness and its high etching selectivity during the excavation. After their fabrication, the transducers have been tested to verify their functionality and, thus, to validate this low temperature process. Device physical properties have been determined by electrical and optical measurement in air. We evaluated resonance frequency, collapse voltage and electromechanical coupling coefficient in accordance with the simulation. Eventually, low charging effects and low initial deflections can predict good long-term use and ageing of the cMUTs. (paper)
Availability note (English)
Available from http://dx.doi.org/10.1088/0960-1317/24/4/045020Additional details
Identifiers
Publishing Information
- Journal Title
- Journal of Micromechanics and Microengineering. Structures, Devices and Systems
- Journal Volume
- 24
- Journal Issue
- 4
- Journal Page Range
- [12 p.]
- ISSN
- 0960-1317
- CODEN
- JMMIEZ
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 47058168
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Descriptors DEI
- AGING; AIR; BIOMEDICAL RADIOGRAPHY; CHEMICAL VAPOR DEPOSITION; ELECTRIC POTENTIAL; ELECTRODES; ETCHING; FABRICATION; LAYERS; MEMBRANES; NICKEL; NICKEL SILICIDES; PHYSICAL PROPERTIES; ROUGHNESS; SILICON NITRIDES; SIMULATION; TEMPERATURE RANGE 0065-0273 K; TEMPERATURE RANGE 0400-1000 K; TRANSDUCERS; ULTRASONOGRAPHY
- Descriptors DEC
- CHEMICAL COATING; DEPOSITION; DIAGNOSTIC TECHNIQUES; ELEMENTS; FLUIDS; GASES; MEDICINE; METALS; NICKEL COMPOUNDS; NITRIDES; NITROGEN COMPOUNDS; NUCLEAR MEDICINE; PNICTIDES; RADIOLOGY; SILICIDES; SILICON COMPOUNDS; SURFACE COATING; SURFACE FINISHING; SURFACE PROPERTIES; TEMPERATURE RANGE; TRANSITION ELEMENT COMPOUNDS; TRANSITION ELEMENTS