XPS- and AES-investigations of electron and ion beam induced effects on SK16 glass surfaces

Electron beam induced effects in the near surface region of SK16 glass samples (44% SiO2, 25% B2O3, 28% BaO, 3% other) have been studied using Auger electron spectroscopy (AES) with 3 keV primary electrons at different current densities (4.7 mAcm-2-75 mAcm-2). It was found that the SiO2 and B2O3 constituents dissociate during electron bombardment to form binding structures which are characteristic for elemental Si and B, respectively. To investigate the influence of the ion beam irradiation on the binding structure, the glass samples were bombarded with Ar+ ions of different kinetic energies (0.5 keV-5 keV), followed by XPS analysis. In comparison to the XPS signal of a virgin SK16 surface from a sample fractured in situ under UHV conditions, the FWHM of the photoelectron peaks were found to increase with the bombarding ion energy. Subsequent Auger spectra revealed that the ion bombardment also caused a dissociation of the SiO2 and B2O3 components. Depending on the ion energy, a constant ratio between elemental and oxidized binding form is obtained. (orig.)