A review of deep-level defects in III-V semiconductors

The work is mainly inspired from the achievements of transient emission and photocapacitance methods of characterisation. After recalling the concept of 'signature' of a deep-level state, signature inventories are presented for GaP and GaAs. InP is also mentioned. A review is presented of information on defect production, as related to crystal growth, heat treatment and particle irradiation, for GaAs and related compounds. The second part is devoted to very recent findings relative to metastable deep-level states and to field effects, including anisotropy of the field effect in GaAs. (author)