Published December 28, 2011 | Version v1
Journal article

Magnetic field dependency of spin-splitting in In0.75Ga0.25As/ In0.75Al0.25As two dimensional electron gas with strong Rashba spin-orbit coupling

  • 1. CNMT JAIST, 1-1, Asahidai, Nomi, Ishikawa 923-1292 (Japan)
  • 2. NIMS, 3-13, Sakura, Tsukuba, Ibaraki 305-0003 (Japan)

Description

High-field magneto-resistance (MR) properties including Shubnikov de-Haas (SdH) oscillation and integer quantum Hall effect are observed and analyzed in high In-content InGaAs/InAlAs two-dimensional electron gas (2DEG) with strong Rashba effect. From the results, conventional longitudinal resistance oscillations with Zeeman splitting as well as quantum Hall plateaus are confirmed and a transition from zero-field spin-splitting to high-field Zeeman splitting is discussed. The two-kind spin splittings are seem to be connected via the sign changing process at finite (∼3 Tesla) magnetic field, the value of which is about two times larger than that in high In-content InGaSb/InAlSb system.

Availability note (English)

Available from http://dx.doi.org/10.1088/1742-6596/334/1/012063

Additional details

Publishing Information

Journal Title
Journal of Physics. Conference Series (Online)
Journal Volume
334
Journal Issue
1
Journal Page Range
[4 p.]
ISSN
1742-6596

Conference

Title
19. international conference on the application of high magnetic fields in semiconductor physics and nanotechnology
Dates
1-6 Aug 2010
Place
Fukuoka (Japan)