Published October 2009 | Version v1
Journal article

A 10-bit low power SAR A/D converter based on 90 nm CMOS

  • 1. Institute of Microelectronics, Xidian University, Xi'an 710071 (China)
  • 2. IP-2 of D. S. Division, Semiconductor Manufacturing International Corporation, Shanghai 201203 (China)

Description

Traditional and some recently reported low power, high speed and high resolution approaches for SAR A/D converters are discussed. Based on SMIC 65 nm CMOS technology, two typical low power methods reported in previous works are validated by circuit design and simulation. Design challenges and considerations for high speed SAR A/D converters are presented. Moreover, an R-C combination based method is also addressed and a 10-bit SAR A/D converter with this approach is implemented in SMIC 90 nm CMOS process. The DNL and INL are measured to be less than 0.31 LSB and 0.59 LSB respectively. With an input frequency of 420 kHz at 1 MS/s sampling rate, the SFDR and ENOB are measured to be 67.6 dB and 9.46 bits respectively, and the power dissipation is measured to be just 3.17 mW.

Availability note (English)

Available from http://dx.doi.org/10.1088/1674-4926/30/10/105008

Additional details

Publishing Information

Journal Title
Journal of Semiconductors
Journal Volume
30
Journal Issue
10
Journal Page Range
[8 p.]
ISSN
1674-4926

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
42068413
Subject category
S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
Descriptors DEI
ANALOG-TO-DIGITAL CONVERTERS; DESIGN; MOS TRANSISTORS
Descriptors DEC
ELECTRONIC EQUIPMENT; EQUIPMENT; SEMICONDUCTOR DEVICES; TRANSISTORS