Published March 1979 | Version v1
Journal article Metadata-only

Excess carrier recombination in P implanted silicon

Creators

  • 1. Universita J.E. Purkyne, Brno (Czechoslovakia)

Description

Qualitative analysis of recombination in implanted layers is given. Depth profiles of photoconductivity and photoconductivity relaxation in P implanted silicon are presented. From experimental results it follows that a layer of changed recombination near the surface is formed in P implanted silicon. The thickness and recombination property of the layer depend strongly on annealing temperature. (author)

Additional details

Publishing Information

Journal Title
Radiat. Eff.
Journal Volume
40
Journal Issue
4
Series
Radiat. Eff.
Journal Page Range
139-199
ISSN
0033-7579

INIS

Country of Publication
United Kingdom
Country of Input or Organization
United Kingdom
INIS RN
11503578
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
ANNEALING; CHARGE CARRIERS; DEPTH; ION IMPLANTATION; LAYERS; PHOSPHORUS IONS; PHOTOCONDUCTIVITY; RECOMBINATION; RELAXATION; SILICON; SPATIAL DISTRIBUTION; TEMPERATURE DEPENDENCE
Descriptors DEC
ATOMIC IONS; CHARGED PARTICLES; DIMENSIONS; DISTRIBUTION; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; ELEMENTS; HEAT TREATMENTS; IONS; PHYSICAL PROPERTIES; SEMIMETALS