Published June 1980
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Modified thin film processing sequence
Description
A modified thin film processing sequence in which tantalum nitride (TA2N) resistors are stabilized prior to chromium/gold (Cr/Au) evaporation was investigated, and the effects of subsequent processing on unstabilized Cr/Au films were determined. Thin films evaporated using the modified process yielded results similar to those of films evaporated using the standard processing techniques. Work on the modified process was discontinued because of some metallization adhesion failures at the Cr/Au-to-Ta2N interface, higher contact resistance, and the additional steps required in processing
Availability note (English)
MF available from INIS under the Report Number; Available from NTIS., PC A02/MF A01.Files
12588548.pdf
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Additional details
Publishing Information
- Imprint Pagination
- 20 p.
- Report number
- BDX--613-2409
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 12588548
- Subject category
- S42: ENGINEERING;
- Descriptors DEI
- CHROMIUM; DEPOSITION; EVAPORATION; FABRICATION; FILMS; GOLD; MICROELECTRONIC CIRCUITS; RESISTORS; STABILITY; TANTALUM NITRIDES
- Descriptors DEC
- ELECTRICAL EQUIPMENT; ELECTRONIC CIRCUITS; ELEMENTS; METALS; NITRIDES; NITROGEN COMPOUNDS; PHASE TRANSFORMATIONS; TANTALUM COMPOUNDS; TRANSITION ELEMENT COMPOUNDS; TRANSITION ELEMENTS