Studies in the growth of ZnSe on GaAs(001)

Full text: This paper reports a study of the Molecular Beam Epitaxial (MBE) growth of ZnSe on GaAs substrates using elemental sources. Growth rates of ZnSe as a function of Zn:Se flux ratio for constant Zn flux were determined over a wider range of values than previously reported. Careful measurements of atomic fluxes and sample thickness lead to a determination of the sticking coefficients of Zn and Se which are at variance with many previously reported values. The temperature dependence of the sticking coefficients of Zn and Se have been measured carefully and provide evidence for a greater desorption of As from the growing surface that previously thought, an effect which persists at low growth temperatures. Measurements at high flux ratio supports the use of a precursor model to describe MBE growth of ZnSe on GaAs substrates