Electrical properties of SnO2 ceramics for low voltage varistors
- 1. Universidad Tecnologica de la Mixteca, Huajuapan de Leon 69000, Oaxaca (Mexico)
- 2. Brunel University, Uxbridge, UB8 3PH (United Kingdom)
- 3. Dnepropetrovsk National University, Dnepropetrovsk 49010 (Ukraine)
Description
It is shown that an addition of bismuth oxide Bi2O3 (0.5 mol%) to the system SnO2–CoO–Nb2O5–Cr2O3 with small amounts of Nb2O5 and Cr2O3 (0.05 mol%) leads to a significant decrease in the electric field where a strong nonlinearity of the current–voltage characteristic takes place. This effect facilitates manufacture of ceramic materials for low voltage varistors with a relatively high nonlinearity coefficient of 15–20 and an electric field of 430−580Vcm−1 (at a sintering temperature of 1300 °C) and, respectively, 11 and 287Vcm−1 (at 1400 °C). The obtained experimental data indicate that ceramic materials in the system SnO2–CoO–Nb2O5–Cr2O3–Bi2O3 exhibit the typical structure of varistor ceramics with conductive grains of tin dioxide (SnO2) and highly resistive grain boundaries. In particular, the capacitance at 10 Hz and high dc bias becomes negative as in other SnO2 and ZnO varistors
Availability note (English)
Available from http://dx.doi.org/10.1016/j.physb.2014.09.026Additional details
Identifiers
- DOI
- 10.1016/j.physb.2014.09.026;
- PII
- S0921-4526(14)00754-6;
Publishing Information
- Journal Title
- Physica. B, Condensed Matter
- Journal Volume
- 457
- Journal Page Range
- p. 108-112
- ISSN
- 0921-4526
- CODEN
- PHYBE3
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 46120662
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- BISMUTH OXIDES; CAPACITANCE; CERAMICS; CHROMATES; CHROMIUM OXIDES; COBALT OXIDES; ELECTRIC CONDUCTIVITY; ELECTRIC FIELDS; ELECTRIC POTENTIAL; GRAIN BOUNDARIES; NIOBATES; NIOBIUM OXIDES; NONLINEAR PROBLEMS; SEMICONDUCTOR RESISTORS; SINTERING; TEMPERATURE RANGE 1000-4000 K; TIN OXIDES; ZINC OXIDES
- Descriptors DEC
- BISMUTH COMPOUNDS; CHALCOGENIDES; CHROMIUM COMPOUNDS; COBALT COMPOUNDS; ELECTRICAL EQUIPMENT; ELECTRICAL PROPERTIES; EQUIPMENT; FABRICATION; MICROSTRUCTURE; NIOBIUM COMPOUNDS; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; REFRACTORY METAL COMPOUNDS; RESISTORS; SEMICONDUCTOR DEVICES; TEMPERATURE RANGE; TIN COMPOUNDS; TRANSITION ELEMENT COMPOUNDS; ZINC COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2014 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.