Published April 1983
| Version v1
Journal article
Au-Si-Be liquid metal ion source for maskless ion implantation
- 1. Optoelectronics Joint Research Laboratory (OJRL), Kawasaki, Kanagawa (Japan)
Description
A new alloyed-liquid-metal ion source for ion implantation into III-V compound semiconductors has been developed. A ternary alloy consisting of Au, Si and Be is used as the liquid metal for this ion source which is capable of emitting p-type dopant(Be), n-type dopant(Si), and Au ions from a single emitter tip. Threshold voltage for emitting ion current is about 6kV and Be++, Si++ and Au+ ions are dominant. Energy spreads of Be and Si ion beams are less than 10 eV, while that of Au was greater than 15 eV. (author)
Additional details
Publishing Information
- Journal Title
- Jpn. J. Appl. Phys., Part 2
- Journal Volume
- 22
- Journal Issue
- 4
- Series
- Jpn. J. Appl. Phys., Part 2.
- Journal Page Range
- L225-L226
INIS
- Country of Publication
- Japan
- Country of Input or Organization
- Japan
- INIS RN
- 15057293
- Subject category
- S74: ATOMIC AND MOLECULAR PHYSICS;
- Descriptors DEI
- BERYLLIUM; ENERGY RESOLUTION; GOLD; ION IMPLANTATION; ION SOURCES; LIQUID METALS; MASS SPECTRA; SILICON; TERNARY ALLOY SYSTEMS
- Descriptors DEC
- ALKALINE EARTH METALS; ALLOY SYSTEMS; ELEMENTS; FLUIDS; LIQUIDS; METALS; RESOLUTION; SEMIMETALS; SPECTRA; TRANSITION ELEMENTS