RF sputtered HgCdTe films for tandem cell applications

Polycrystalline Hg1-xCdxTe films were investigated for their potential as bottom cells of a CdTe-based tandem solar cell. The films were deposited by RF sputtering from a cold pressed target containing 30% HgTe+70% CdTe. The as-deposited films were highly resistive with (111) preferred orientation and a bandgap of ∝1.0 eV. Various thermal treatment schemes were investigated under different conditions of ambient and temperature to reduce the resistivity. The film properties were analyzed using infrared transmission spectra, energy dispersive X-ray spectra and X-ray diffraction. N doped p-HgCdTe films were also prepared by reactive sputtering in a N2/Ar ambient. P-n junction solar cells were fabricated with CdS films as the heterojunction partner. (copyright 2004 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)