Published July 1975
| Version v1
Journal article
Optical absorption in Ge and Si after proton bombardment at 10 K
Description
The first observation of annealing centered at approx. = 30 K for near-edge absorption in proton-bombarded Ge is reported, and direct production of the 2.4-μm band in Ge and of the 1.7-μm divacancy band in Si is shown to occur for 400-keV proton bombardment at 10 K. Annealing between 10 and 70 K has no effect within experimental uncertainties upon the 2.4-μm band in Ge or upon the proton-induced-defect absorption in Si
Additional details
Identifiers
- DOI
- 10.1063/1.321976;
Publishing Information
- Journal Title
- Journal of Applied Physics
- Journal Volume
- 46
- Journal Issue
- 7
- Series
- J. Appl. Phys.
- Journal Page Range
- 3211-3212
- ISSN
- 0021-8979
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 6212875
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ABSORPTION SPECTRA; ANNEALING; CRYSTAL DEFECTS; GERMANIUM; KEV RANGE 100-1000; PHYSICAL RADIATION EFFECTS; PROTON BEAMS; PROTONS; SILICON; TRANSMISSION; ULTRALOW TEMPERATURE
- Descriptors DEC
- BARYONS; BEAMS; CATIONS; CHARGED PARTICLES; CRYSTAL STRUCTURE; ELEMENTARY PARTICLES; ELEMENTS; ENERGY RANGE; FERMIONS; HADRONS; HEAT TREATMENTS; HYDROGEN IONS; HYDROGEN IONS 1 PLUS; IONS; KEV RANGE; METALS; NUCLEON BEAMS; NUCLEONS; PARTICLE BEAMS; RADIATION EFFECTS; SEMIMETALS; SPECTRA
Optional Information
- Notes
- Updated automatically by Metadata and Full-Text Enrichment Agent