Published March 31, 2006 | Version v1
Journal article

Muonium states in II-VI zinc chalcogenide semiconductors

  • 1. Physics Department, University of Coimbra, P-3004-516 Coimbra (Portugal)
  • 2. Physics Department, Texas Tech University, Lubbock, Texas 79409-1051 (United States)
  • 3. Department of Physics, University of Alberta, Edmonton, Canada T6G 2J1 (Canada)
  • 4. ISIS Facility, Rutherford Appleton Laboratory, Chilton, Didcot, Oxon OX11 0QX (United Kingdom)
  • 5. ISIS Facility, Rutherford Appleton Laboratory, Chilton, Didcot, Oxon OX11 0QX (United Kingdom): Condensed Matter Physics, University College London, WC1E 6BT (United Kingdom)

Description

A systematic experimental study of muonium states in the binary compounds ZnSe, ZnS and ZnTe is presented. Deep muonium states are observed in ZnSe and ZnS but not in ZnTe. In ZnTe, only the diamagnetic signal is seen. The temperature dependence of the muonium and muon fractions is measured in the three materials by muon spin rotation and, for ZnTe, also by RF-μSR. In none of the three compounds any indication of the neutral donor state, known from ZnO, CdS and others, is found. We conclude that in the Zn chalcogenides the neutral (interstitial) muonium configuration is more stable than the neutral (anion bonded) shallow donor configuration. The significance of the results is discussed with respect to the behaviour of hydrogen

Additional details

Identifiers

DOI
10.1016/j.physb.2005.11.107;
PII
S0921-4526(05)01325-6;

Publishing Information

Journal Title
Physica. B, Condensed Matter
Journal Volume
374-375
Journal Page Range
p. 383-386
ISSN
0921-4526
CODEN
PHYBE3

Conference

Title
10. international conference on muon spin rotation, relaxation and resonance
Dates
8-12 Aug 2005
Place
Oxford (United Kingdom)

Optional Information

Copyright
Copyright (c) 2005 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.