Published March 1991 | Version v1
Journal article Metadata-only

The in-situ preparation and properties of Y-Ba-Cu-O thin films on the SrTiO3, Al2O3 and Si substrates

Creators

  • 1. Inst. of Radio Engineering and Electronics, USSR Academy of Sciences, 18 Marx av., GSP-3 Moscow (USSR)

Description

This paper discusses the in-situ preparation of Y-Ba-Cu-O thin (d = 0.1-1 μm) films by the RF magnetron sputtering of ceramic YBa2Cu3+yOx targets on the single crystal SrTlO3, Al2O3 and Si heated substrates in the argon-oxygen-water vapor atmosphere. Special substrate beater was developed. Various buffer layers for Al2O3 and Si substrates were used. The method of preparing the mirror-like surface films is described. Film surface degradation because of the storage in air was studied. Electrical and structural properties of these films are reported as well as the preliminary results of investigation of multilayer structures based on such films

Additional details

Publishing Information

Journal Title
IEEE Transactions on Magnetics
Journal Volume
27
Journal Issue
2
Series
IEEE Trans. Magn.
Journal Page Range
1475-1478
ISSN
0018-9464
CODEN
IEMGA

Conference

Title
1990 applied superconductivity conference.
Dates
24-28 Sep 1990.
Place
Snowmass, CO (United States).

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
23034303
Subject category
S36: MATERIALS SCIENCE; S36: MATERIALS SCIENCE; S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference
Descriptors DEI
ALUMINIUM OXIDES; BARIUM OXIDES; CONTROLLED ATMOSPHERES; COPPER OXIDES; CRYSTAL STRUCTURE; ELECTRICAL PROPERTIES; SILICON; SPUTTERING; STRONTIUM OXIDES; SUBSTRATES; THIN FILMS; TITANIUM OXIDES; YTTRIUM OXIDES
Descriptors DEC
ALKALINE EARTH METAL COMPOUNDS; ALUMINIUM COMPOUNDS; BARIUM COMPOUNDS; CHALCOGENIDES; COPPER COMPOUNDS; ELEMENTS; FILMS; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; SEMIMETALS; STRONTIUM COMPOUNDS; TITANIUM COMPOUNDS; TRANSITION ELEMENT COMPOUNDS; YTTRIUM COMPOUNDS

Optional Information

Secondary number(s)
CONF-900944--.