Published January 30, 2008
| Version v1
Journal article
Tailoring of morphology and emission wavelength of AlGaInAs quantum dots
- 1. Technische Physik, Universitaet Wuerzburg, Am Hubland, D-97074 Wuerzburg (Germany)
Description
We present a study of the growth, morphology and optical properties of AlxGa1-x-yInyAs quantum dots (QDs) for a wide range of Al and In concentrations (0≤x≤0.34 and 0.43≤y≤0.60). Short emission wavelengths between 660 and 940 nm and QD surface densities up to 1.1 x 1011 cm-2 have been achieved. Our results show that by varying both the Al concentration and the In concentration an independent adjustment of strain and QD band gap is possible. This additional degree of freedom can be employed for tailoring AlGaInAs QDs with the desired emission wavelength, surface density and average size. AlGaInAs QDs thus offer new possibilities for future QD device design
Additional details
Identifiers
- DOI
- 10.1088/0957-4484/19/04/045601;
- PII
- S0957-4484(08)58070-6;
Publishing Information
- Journal Title
- Nanotechnology (Print)
- Journal Volume
- 19
- Journal Issue
- 4
- Journal Page Range
- p. 045601
- ISSN
- 0957-4484
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 39039698
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ALUMINIUM ALLOYS; ALUMINIUM ARSENIDES; ARSENIC ALLOYS; CRYSTAL GROWTH; DEGREES OF FREEDOM; GALLIUM ALLOYS; GALLIUM ARSENIDES; INDIUM ALLOYS; INDIUM ARSENIDES; INTERMETALLIC COMPOUNDS; MORPHOLOGY; OPTICAL PROPERTIES; QUANTUM DOTS; WAVELENGTHS
- Descriptors DEC
- ALLOYS; ALUMINIUM COMPOUNDS; ARSENIC COMPOUNDS; ARSENIDES; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; NANOSTRUCTURES; PHYSICAL PROPERTIES; PNICTIDES