Published July 16, 1980 | Version v1
Journal article Metadata-only

Electrical properties of electron (2 MeV) irradiated p-CdSiAs2 and p-ZnSiAs2 crystals

Creators

  • 1. Tomskij Gosudarstvennyj Univ. (USSR). Sibirskij Fiziko-Tekhnicheskij Inst.
  • 2. AN SSSR, Moscow. Fiziko-Tekhnicheskij Inst.

Description

The electrical properties and post-irradiated isochronal annealing of heavily electron irradiated (up to 1019 electrons/cm2) p-CdSiAs2 and p-ZnSiAs2 crystals have been investigated. The results obtained are presented and discussed in detail

Additional details

Publishing Information

Journal Title
Phys. Status Solidi A
Journal Volume
60
Journal Issue
1
Series
Phys. Status Solidi A.
Journal Page Range
K57-K60
ISSN
0031-8965

INIS

Country of Publication
Germany
Country of Input or Organization
German Democratic Republic
INIS RN
12607056
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
ANNEALING; CADMIUM ARSENIDES; CRYSTAL DEFECTS; ELECTRIC CONDUCTIVITY; ELECTRON BEAMS; FERMI LEVEL; P-TYPE CONDUCTORS; PHYSICAL RADIATION EFFECTS; SILICON ARSENIDES
Descriptors DEC
ARSENIC COMPOUNDS; ARSENIDES; BEAMS; CADMIUM COMPOUNDS; CRYSTAL STRUCTURE; ELECTRICAL PROPERTIES; ENERGY LEVELS; HEAT TREATMENTS; LEPTON BEAMS; PARTICLE BEAMS; PHYSICAL PROPERTIES; RADIATION EFFECTS; SEMICONDUCTOR MATERIALS; SILICON COMPOUNDS

Optional Information

Notes
Short note.