Published January 1976
| Version v1
Journal article
Photoluminescence study of Cd-ion implanted n-GaAs
- 1. Osaka Univ., Toyonaka (Japan). Faculty of Engineering Science
Description
The implantation effect of Cd ions in GaAs was studied by photoluminescence measurements. Hot implantation and annealing were done at 3000C and 8000C, respectively. The emission due to a Cd acceptor at a Ga lattice site was observed in Cd-ion implanted GaAs at a dose of 1x1015/cm2. Measurements were made of the emission-peak shift as a function of temperature, the thermal quenching of the intensity, and the change of the line shape. The optical properties of implanted GaAs were similar to those of boat-grown Cd-doped p-GaAs. Deep penetration of Cd ions was found. (auth.)
Additional details
Identifiers
- DOI
- 10.1143/jjap.15.145;
Publishing Information
- Journal Title
- Japanese Journal of Applied Physics
- Journal Volume
- 15
- Journal Issue
- 1
- Series
- Jpn. J. Appl. Phys.
- Journal Page Range
- 145-149
- ISSN
- 0021-4922
INIS
- Country of Publication
- Japan
- Country of Input or Organization
- Japan
- INIS RN
- 8294224
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ARSENIC ALLOYS; CADMIUM IONS; EMISSION SPECTRA; GALLIUM ALLOYS; GALLIUM ARSENIDES; ION IMPLANTATION; LOW TEMPERATURE; MEDIUM TEMPERATURE; PHOTOLUMINESCENCE; TEMPERATURE DEPENDENCE
- Descriptors DEC
- ALLOYS; ARSENIC COMPOUNDS; ARSENIDES; ATOMIC IONS; CHARGED PARTICLES; GALLIUM COMPOUNDS; IONS; LUMINESCENCE; SPECTRA
Optional Information
- Notes
- Updated automatically by Metadata and Full-Text Enrichment Agent