Published September 24, 2007 | Version v1
Journal article Metadata-only

Cu films containing insoluble Ru and RuNX on barrierless Si for excellent property improvements

Creators

  • 1. Institute of Materials Engineering, National Taiwan Ocean University, Keelung 20224, Taiwan (China)
  • 2. Department of Electronic Materials, Chin-Min Institute of Technology, Tou-Fen 35153, Taiwan (China)
  • 3. Department of Polymer Engineering, National Taiwan University of Science and Technology, Taipei 10607, Taiwan (China)

Description

This letter reports superior properties of Ru- and RuNX-bearing Cu films deposited by cosputtering on barrierless Si substrates. After annealing at temperatures up to 680 deg. C for 1 h, low resistivity of ∼3 μΩ cm and minimal leakage currents as well as no detectable reaction at the Cu/Si interface have confirmed the excellent thermal stability of these Cu(Ru) and Cu(RuNX) films. Furthermore, the highly stable Cu(RuNX) film exhibits an outstanding adhesion property, proving to be a very promising candidate for the barrierless Cu metallization

Additional details

Identifiers

DOI
10.1063/1.2790843;

Publishing Information

Journal Title
Applied Physics Letters
Journal Volume
91
Journal Issue
13
Journal Page Range
p. 132109-132109.3
ISSN
0003-6951
CODEN
APPLAB

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
39035842
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
ADHESION; ANNEALING; COPPER; DEPOSITION; ELECTRIC CONDUCTIVITY; FILMS; LEAKAGE CURRENT; RUTHENIUM; RUTHENIUM NITRIDES; SILICON; SUBSTRATES
Descriptors DEC
CURRENTS; ELECTRIC CURRENTS; ELECTRICAL PROPERTIES; ELEMENTS; HEAT TREATMENTS; METALS; NITRIDES; NITROGEN COMPOUNDS; PHYSICAL PROPERTIES; PLATINUM METALS; PNICTIDES; REFRACTORY METAL COMPOUNDS; REFRACTORY METALS; RUTHENIUM COMPOUNDS; SEMIMETALS; TRANSITION ELEMENT COMPOUNDS; TRANSITION ELEMENTS

Optional Information

Notes
(c) 2007 American Institute of Physics