Published April 12, 1993
| Version v1
Journal article
Determination of atomic density profiles in synthetic multilayers by anomalous x-ray diffraction
Creators
- 1. Department of Physics, University of Oregon, Eugene, Oregon 97403 (United States)
- 2. Department of Chemistry, University of Oregon, Eugene, Oregon 97403 (United States)
Description
We report a simple and nondestructive method to determine directly the spatial profiles of the constituent elements in a synthetic multilayered material with a resolution of 10--20 A. This has been accomplished by measuring the x-ray diffraction Bragg peak intensities over a large range of energies, and interpreting these data using a dynamical theory to deduce the first few Fourier coefficients of the relevant spatial profiles. We present initial results for Ti-Si multilayer samples grown by thermal deposition. These results demonstrate extensive interdiffusion of the silicon into the titanium layers, even without annealing
Additional details
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 62
- Journal Issue
- 15
- Journal Page Range
- p. 1771-1773.
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 24052459
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S36: MATERIALS SCIENCE;
- Descriptors DEI
- CHEMICAL COMPOSITION; DIFFUSION; HETEROJUNCTIONS; INTERFACES; MEASURING METHODS; SILICON; SPATIAL RESOLUTION; TITANIUM; X-RAY DIFFRACTION
- Descriptors DEC
- COHERENT SCATTERING; DIFFRACTION; ELEMENTS; METALS; RESOLUTION; SCATTERING; SEMICONDUCTOR JUNCTIONS; SEMIMETALS; TRANSITION ELEMENTS