Published September 2012 | Version v1
Journal article Metadata-only

Development of dilute nitride materials for mid-infrared diode lasers

Creators

  • 1. Physics Department, Lancaster University, Lancaster, LA1 4YB (United Kingdom)
  • 2. School of Physics and Astronomy, Nottingham University, Nottingham, NG7 2RD (United Kingdom)
  • 3. Institute of Physics, Wroclaw University of Technology, Wybrzeze Wyspianskiego 27, 50-370 Wroclaw (Poland)

Description

The development of dilute nitride alloys for use in mid-infrared diode lasers operating in the 3–4 µm spectral range is described. The dilute nitrides are found to offer improved temperature stability of the photon emission. This arises from localization effects and reduced non-radiative Auger recombination. (paper)

Availability note (English)

Available from http://dx.doi.org/10.1088/0268-1242/27/9/094009

Additional details

Identifiers

DOI
10.1088/0268-1242/27/9/094009;

Publishing Information

Journal Title
Semiconductor Science and Technology
Journal Volume
27
Journal Issue
9
Journal Page Range
[8 p.]
ISSN
0268-1242
CODEN
SSTEET

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
45014107
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
ALLOYS; LASERS; PHOTON EMISSION; RECOMBINATION; STABILITY
Descriptors DEC
EMISSION