Published January 4, 2010
| Version v1
Journal article
MBE Growth of GaAs Whiskers on Si Nanowires
Creators
- 1. Photonics Institute, Vienna University of Technology, Gusshausstrasse 29/387, 1040 Wien (Austria)
- 2. Institute for Solid-State Electronics, Vienna University of Technology, Floragasse 7/362, 1040 Wien (Austria)
- 3. Center for Micro- and Nanostructures, Vienna University of Technology, Floragasse 7/392, 1040 Wien (Austria)
- 4. Dept. of Physics and Dept. of Electrical Engineering, SUNY at Buffalo, 332 Bonner Hall, New York 14260 (United States)
Description
We present the growth of GaAs nanowhiskers by molecular beam epitaxy on Si (111) nanowires grown by low-pressure chemical vapor deposition. The whiskers grow in the wurtzite phase, along the [0001] direction, on the {112} facets of the Si nanowire, forming a star-like six-fold radial symmetry. The photoluminescence shows a 30 meV blue shift with respect to bulk GaAs, additionally a GaAs/AlAs core-shell heterostructure shows increased luminescence.
Additional details
Identifiers
- DOI
- 10.1063/1.3295399;
Publishing Information
- Journal Title
- AIP Conference Proceedings
- Journal Volume
- 1199
- Journal Issue
- 1
- Journal Page Range
- p. 261-262
- ISSN
- 0094-243X
- CODEN
- APCPCS
Conference
- Title
- 29. international conference on the physics of semiconductors
- Dates
- 27 Jul - 1 Aug 2008
- Place
- Rio de Janeiro (Brazil)
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 41101853
- Subject category
- S77: NANOSCIENCE AND NANOTECHNOLOGY; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ALUMINIUM ARSENIDES; CHEMICAL VAPOR DEPOSITION; CRYSTAL STRUCTURE; GALLIUM ARSENIDES; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; QUANTUM WIRES; SEMICONDUCTOR MATERIALS; SILICON; WHISKERS; X-RAY DIFFRACTION
- Descriptors DEC
- ALUMINIUM COMPOUNDS; ARSENIC COMPOUNDS; ARSENIDES; CHEMICAL COATING; COHERENT SCATTERING; CRYSTAL GROWTH METHODS; CRYSTALS; DEPOSITION; DIFFRACTION; ELEMENTS; EMISSION; EPITAXY; GALLIUM COMPOUNDS; LUMINESCENCE; MATERIALS; MONOCRYSTALS; NANOSTRUCTURES; PHOTON EMISSION; PNICTIDES; SCATTERING; SEMICONDUCTOR JUNCTIONS; SEMIMETALS; SURFACE COATING
Optional Information
- Notes
- (c) 2009 American Institute of Physics