Effect of grain boundary on electrical properties of polycrystalline lanthanum nickel oxide thin films

In the present work, lanthanum nickel oxide (LNO) thin films were prepared by the sol-gel method. Microstructures of the films were tailored by changing sol concentration so as to investigate the effect of grain boundary on the transport properties of electrons in the polycrystalline LNO films. Based on the temperature dependence of the resistivity and the magnetic field dependence of the magnetoresistance (MR) at various temperatures, the factors that dominate the transport behavior in the polycrystalline LNO films were explored in terms of weak localization and strong localization. The results show that the grain boundary has a significant influence on the transport behavior of the electrons in LNO films at a low-temperature region, which can be captured by a variable-range hopping (VRH) model. The increase of metal-insulator (M-I) transition temperature is ascribed to Anderson localization in grain boundary. At a high-temperature region, electron-electron scattering and electron-phonon scattering predominates in the films. In this case, the existence of more grain boundary shows a minor effect on the transport behavior of the electrons but elevates the residual resistivity of the films. (orig.)