Published May 1979 | Version v1
Journal article

On the ''threshold'' energy of the Frenkel-defect formation by fast particles

  • 1. AN Ukrainskoj SSR, Kiev. Inst. Fizicheskoj Khimii

Description

Calculated was the cross-section σ(E) of the Frenkel defect formation as a result of the elastic scattering of fast particle of energy E from a crystal atom with provision for true dependence of the probability W(T) of defect formation on the value of transmitted energy T, which considerably differs from the step probability. σ(E) obtained by such a method goes to zero at some value of E, designated as Esub(d). However, the cross section of defect formation at high energies does not turn to associate with the found Esub(d) by the known ratio σ(E) approximately (Tsub(max)/Esub(d)-1) ratio; the similar association widety used in titerature is erroneous, because it results from incorrect step representation of the probability W(T). σ(E) value obtained qualitatively coincides with experimental dependences for Si and Ge, and a good coincidence of theoretical and experimental curves is achieved by selection of numerical values of characteristic theory parameters

Additional details

Additional titles

Original title (Russian)
О ''пороговой'' энергии образования дефектов Френкеля быстрыми частицами

Publishing Information

Journal Title
Fiz. Tekh. Poluprovodn.
Journal Volume
13
Journal Issue
5
Series
Fiz. Tekh. Poluprovodn.
Journal Page Range
912-920
ISSN
0015-3222

Optional Information

Notes
For English translation see the journal Soviet Physics - Semiconductors (USA).