On the ''threshold'' energy of the Frenkel-defect formation by fast particles
- 1. AN Ukrainskoj SSR, Kiev. Inst. Fizicheskoj Khimii
Description
Calculated was the cross-section σ(E) of the Frenkel defect formation as a result of the elastic scattering of fast particle of energy E from a crystal atom with provision for true dependence of the probability W(T) of defect formation on the value of transmitted energy T, which considerably differs from the step probability. σ(E) obtained by such a method goes to zero at some value of E, designated as Esub(d). However, the cross section of defect formation at high energies does not turn to associate with the found Esub(d) by the known ratio σ(E) approximately (Tsub(max)/Esub(d)-1) ratio; the similar association widety used in titerature is erroneous, because it results from incorrect step representation of the probability W(T). σ(E) value obtained qualitatively coincides with experimental dependences for Si and Ge, and a good coincidence of theoretical and experimental curves is achieved by selection of numerical values of characteristic theory parameters
Additional details
Additional titles
- Original title (Russian)
- О ''пороговой'' энергии образования дефектов Френкеля быстрыми частицами
Publishing Information
- Journal Title
- Fiz. Tekh. Poluprovodn.
- Journal Volume
- 13
- Journal Issue
- 5
- Series
- Fiz. Tekh. Poluprovodn.
- Journal Page Range
- 912-920
- ISSN
- 0015-3222
INIS
- Country of Publication
- Russian Federation
- Country of Input or Organization
- USSR
- INIS RN
- 10492706
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- CROSS SECTIONS; CRYSTALS; ELECTRON-ATOM COLLISIONS; ENERGY DEPENDENCE; FRENKEL DEFECTS; GERMANIUM; PHYSICAL RADIATION EFFECTS; PROBABILITY; SILICON; THRESHOLD ENERGY
- Descriptors DEC
- ATOM COLLISIONS; COLLISIONS; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; ELECTRON COLLISIONS; ELEMENTS; ENERGY; METALS; POINT DEFECTS; RADIATION EFFECTS; SEMIMETALS; VACANCIES
Optional Information
- Notes
- For English translation see the journal Soviet Physics - Semiconductors (USA).