Published August 23, 2010
| Version v1
Journal article
Optical spectroscopy of cubic GaN in nanowires
- 1. Department of Physics and Astronomy, University of British Columbia, Vancouver, British Columbia V6T 1Z4 (Canada)
- 2. CEA-CNRS Group 'Nanophysique et semiconducteurs', CEA-Grenoble INAC-SP2M, Institut Neel, CNRS, Universite Joseph Fourier, 17 rue des Martyrs, 38054 Grenoble (France)
- 3. CEA-LETI, MINATEC, 17 rue des Martyrs 38054 Grenoble Cedex 9 (France)
Description
We show that highly homogeneous cubic GaN can be grown by plasma-assisted molecular beam epitaxy on wurtzite GaN nanowires. The line width of the donor bound exciton is below 3 meV and can reach 1.6 meV in the best parts of the studied sample. This allows to perform a detailed spectroscopy of cubic GaN, and, in particular, to determine the precise spectral positions of the donor bound exciton, the fundamental free exciton and the split-off exciton in a photoluminescence experiment.
Additional details
Identifiers
- DOI
- 10.1063/1.3478004;
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 97
- Journal Issue
- 8
- Journal Page Range
- p. 081910-081910.3
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 42060573
- Subject category
- S77: NANOSCIENCE AND NANOTECHNOLOGY; S36: MATERIALS SCIENCE;
- Descriptors DEI
- ABSORPTION SPECTROSCOPY; CHEMICAL VAPOR DEPOSITION; CRYSTAL GROWTH; CUBIC LATTICES; EXCITONS; GALLIUM NITRIDES; LINE WIDTHS; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; PLASMA; QUANTUM WIRES; SEMICONDUCTOR MATERIALS
- Descriptors DEC
- CHEMICAL COATING; CRYSTAL GROWTH METHODS; CRYSTAL LATTICES; CRYSTAL STRUCTURE; DEPOSITION; EMISSION; EPITAXY; GALLIUM COMPOUNDS; LUMINESCENCE; MATERIALS; NANOSTRUCTURES; NITRIDES; NITROGEN COMPOUNDS; PHOTON EMISSION; PNICTIDES; QUASI PARTICLES; SPECTROSCOPY; SURFACE COATING
Optional Information
- Notes
- (c) 2010 American Institute of Physics