Development of MSGC detectors on diamond film-coated silicon composite substrates
Creators
- 1. School of Materials Science and Engineering, Shanghai University, Shanghai 200072 (China)
- 2. Institute of Science and Technology Information, Tongji University, Shanghai 200092 (China)
Description
In this paper, diamond film-coated silicon was developed to be used as a substrate in a microstrip gas chamber (MSGC) for the first time. The roughness of the composite substrate was rather low, and the resistivity was in the range of 1010-1011Ω cm. Its capacitance was very small and almost had no variation with frequency. All these results prove that the diamond film/Si composite material is a promising substrate for MSGCs. Using this composite substrate, a MSGC detector with an area of 2 x 2 cm2 was fabricated. The effects of the drift voltage and cathode voltage on the energy resolution for 5.9 keV 55Fe x-rays have been examined in detail and discussed. An energy resolution (the relative full width at half maximum of the x-ray peak) of 12.3% was achieved when the MSGC was operated at a drift voltage of -1000 V and a cathode voltage of -650 V with a gas mixture (90% Ar + 10% CH4)
Availability note (English)
Available online at http://stacks.iop.org/0022-3727/38/464/d5_3_018.pdf or at the Web site for the Journal of Physics. D, Applied Physics (ISSN 1361-6463) http://www.iop.org/Additional details
Identifiers
- URL
- http://stacks.iop.org/0022-3727/38/464/d5_3_018.pdf; http://www.iop.org/;
- DOI
- 10.1088/0022-3727/38/3/018;
- PII
- S0022-3727(05)83183-3;
Publishing Information
- Journal Title
- Journal of Physics. D, Applied Physics
- Journal Volume
- 38
- Journal Issue
- 3
- Journal Page Range
- p. 464-467
- ISSN
- 0022-3727
- CODEN
- JPAPBE
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 36037102
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Descriptors DEI
- CAPACITANCE; CATHODES; COMPOSITE MATERIALS; DIAMONDS; ELECTRIC POTENTIAL; ENERGY RESOLUTION; FILMS; IRON 55; KEV RANGE; METHANE; MIXTURES; ROUGHNESS; SI MICROSTRIP DETECTORS; SILICON; SUBSTRATES; X RADIATION
- Descriptors DEC
- ALKANES; BETA DECAY RADIOISOTOPES; CARBON; DISPERSIONS; ELECTRICAL PROPERTIES; ELECTRODES; ELECTROMAGNETIC RADIATION; ELECTRON CAPTURE RADIOISOTOPES; ELEMENTS; ENERGY RANGE; EVEN-ODD NUCLEI; HYDROCARBONS; INTERMEDIATE MASS NUCLEI; IONIZING RADIATIONS; IRON ISOTOPES; ISOTOPES; MATERIALS; MEASURING INSTRUMENTS; MINERALS; NONMETALS; NUCLEI; ORGANIC COMPOUNDS; PHYSICAL PROPERTIES; RADIATION DETECTORS; RADIATIONS; RADIOISOTOPES; RESOLUTION; SEMICONDUCTOR DETECTORS; SEMIMETALS; SI SEMICONDUCTOR DETECTORS; SURFACE PROPERTIES; YEARS LIVING RADIOISOTOPES