Published February 1977
| Version v1
Journal article
Characterization of undoped high resistivity CdTe grown by a THM method
Creators
- 1. Strasbourg-1 Univ., 67 (France). Centre de Recherches Nucleaires
Description
Using time of flight technique, it is shown that the level at Esub(v)+0.15eV, attributed generally to the association of a dopant impurity and a cadmium vacancy, is present in undoped materials. Several methods (TSC, SIMS, nuclear activation) have been used to investigate the nature of this impurity
Additional details
Identifiers
Publishing Information
- Journal Title
- Revue de Physique Appliquée
- Journal Volume
- 12
- Journal Issue
- 2
- Series
- Rev. Phys. Appl.
- Journal Page Range
- 185-188
- ISSN
- 0035-1687
Conference
- Title
- physical properties and applications.
- Acronym
- 2. International symposium on cadmium telluride
- Dates
- 29 Jun 1976.
- Place
- Strasbourg, France.
INIS
- Country of Publication
- France
- Country of Input or Organization
- France
- INIS RN
- 8310051
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- CADMIUM TELLURIDES; ELECTRIC CONDUCTIVITY; ELECTRON MOBILITY; IMPURITIES; ION MOBILITY; TIME-OF-FLIGHT METHOD
- Descriptors DEC
- CADMIUM COMPOUNDS; CHALCOGENIDES; ELECTRICAL PROPERTIES; MOBILITY; PARTICLE MOBILITY; PHYSICAL PROPERTIES; TELLURIDES; TELLURIUM COMPOUNDS
Optional Information
- Notes
- Updated automatically by Metadata and Full-Text Enrichment Agent