Published February 15, 1994
| Version v1
Journal article
Demonstration of gallium-defect annealing at 280 K in irradiated GaAs and AlxGa1-xAs
Creators
- 1. Physics and Astronomy Subject Group, University of Sussex, Brighton BN1-9QH, England (United Kingdom)
Description
Using capacitance-voltage and deep-level transient spectroscopy measurements of electron-trap concentrations, we have compared for n-type Al0.22Ga0.78As and n-type GaAs the thermal annealing at 85--500 K of lattice defects produced by irradiation (by 1.0-MeV protons) at 85 K. The isochronal annealing data indicate defect removal of similar magnitudes in each material in annealing stage I (near 235 K) and in annealing stage III (at 450--500 K), but that the magnitude of the defect removal in stage II (near 280 K) in the Al0.22Ga0.78As is only about a half of the corresponding value in the GaAs. These results show that defects involving gallium atoms are removed in annealing stage II in these materials
Additional details
Publishing Information
- Journal Title
- Physical Review. B, Condensed Matter
- Journal Volume
- 49
- Journal Issue
- 8
- Journal Page Range
- p. 5695-5698.
- ISSN
- 0163-1829
- CODEN
- PRBMDO
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 25042692
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ALUMINIUM ARSENIDES; ANNEALING; GALLIUM ARSENIDES; IRRADIATION; MEV RANGE 01-10; PHYSICAL RADIATION EFFECTS; PROTON BEAMS; SCHOTTKY BARRIER DIODES; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0065-0273 K; TEMPERATURE RANGE 0273-0400 K; TEMPERATURE RANGE 0400-1000 K; TRAPS
- Descriptors DEC
- ALUMINIUM COMPOUNDS; ARSENIC COMPOUNDS; ARSENIDES; BEAMS; ENERGY RANGE; GALLIUM COMPOUNDS; HEAT TREATMENTS; MEV RANGE; NUCLEON BEAMS; PARTICLE BEAMS; PNICTIDES; RADIATION EFFECTS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; TEMPERATURE RANGE