Forming-free electrochemical metallization resistive memory devices based on nanoporous TiO_xN_y thin film

We demonstrate a forming-free electrochemical metallization resistive memory device (Ag/TiO_xN_y/Pt) based on the nanoporous titanium oxynitride (TiO_xN_y) thin film. Due to the nanoporous structure of TiO_xN_y, Ag atoms can migrate into the film during the Ag electrode evaporation process, resulting in a pre-formed Ag conductive filament inside the switching layer. This is responsible for the forming-free resistive switching behavior. Subsequently, resistive switching with attractive performance is achieved after a reset process, including good endurance, low operation voltages, and fast switching speed. The forming-free and reliable switching characteristics suggest that nanoporous TiO_xN_y thin film is one of the promising material candidates for future nonvolatile memory applications. - Highlights: • Nanoporous TiO_xN_y thin films were produced by a TiN oxidation process. • A forming-free behavior based on pre-formed Ag CF has been demonstrated. • Stable and high-speed switching behavior is observed in Ag/TiO_xN_y/Pt device. • The switching mechanism is attributed to the formation and rupture of Ag CF.