Published 2001
| Version v1
Miscellaneous
C-V profiling of GaAs using electrolyte barriers
Description
no abstract available
Additional details
Publishing Information
- Imprint Title
- Abstracts of 6. Polish Conference on Crystal Growth
- Imprint Pagination
- 120 p.
- Journal Page Range
- p. 98
Conference
- Title
- 6. Polish Conference on Crystal Growth
- Dates
- 20-23 May 2001
- Place
- Poznan (Poland)
INIS
- Country of Publication
- Poland
- Country of Input or Organization
- Poland
- INIS RN
- 33034070
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- No Abstract, Conference, Non-conventional Literature
- Descriptors DEI
- CAPACITANCE; CRYSTAL DEFECTS; DEPTH; DOPED MATERIALS; ELECTROLYTES; ETCHING; GALLIUM ARSENIDES; LAYERS; MOLECULAR BEAM EPITAXY; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR MATERIALS; SUBSTRATES
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; CRYSTAL GROWTH METHODS; CRYSTAL STRUCTURE; DIMENSIONS; ELECTRICAL PROPERTIES; EPITAXY; GALLIUM COMPOUNDS; MATERIALS; PHYSICAL PROPERTIES; PNICTIDES; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; SURFACE FINISHING