Published 1983
| Version v1
Journal article
On electron beam excited TSEE from oxides: SiO2:B
Description
It has become clear over the last decade that electron beam excited thermally stimulated exoelectron emission (TSEE) in SiO2 is not completely predictable both in terms of time and intensity variations. Experiments using a 130 nm layer of SiO2 doped with boron are described and from the results some suggestions are made to explain the phenomena. (author)
Additional details
Publishing Information
- Journal Title
- Radiat. Prot. Dosim.
- Journal Volume
- 4
- Journal Issue
- 3-4
- Series
- Radiat. Prot. Dosim.
- Journal Page Range
- 234-235
- ISSN
- 0144-8420
Conference
- Title
- 7. International Symposium on Exoelectron Emission and its Applications.
- Dates
- 16-18 Mar 1983.
- Place
- Strasbourg (France).
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- United Kingdom
- INIS RN
- 15027499
- Subject category
- S36: MATERIALS SCIENCE; S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- BORON ADDITIONS; DOPED MATERIALS; ELECTRON BEAMS; ELECTRON EMISSION; EXOELECTRONS; PHYSICAL RADIATION EFFECTS; SILICON OXIDES
- Descriptors DEC
- BEAMS; CHALCOGENIDES; ELECTRONS; ELEMENTARY PARTICLES; EMISSION; FERMIONS; LEPTON BEAMS; LEPTONS; MATERIALS; OXIDES; OXYGEN COMPOUNDS; PARTICLE BEAMS; RADIATION EFFECTS; SILICON COMPOUNDS