Published November 13, 2006 | Version v1
Journal article

Characterisation Of The Beam Plasma In High Current, Low Energy Ion Beams For Implanters

  • 1. Institute of Materials Research, University of Salford, Salford M4 5WT (United Kingdom)
  • 2. Applied Materials, Foundry Lane, Horsham, RH13 5PY (United Kingdom)

Description

The effective transport of high current, positive ion beams at low energies in ion implanters requires the a high level of space charge compensation. The self-induced or forced introduction of electrons is known to result in the creation of a so-called beam plasma through which the beam propagates. Despite the ability of beams at energies above about 3-5 keV to create their own neutralising plasmas and the development of highly effective, plasma based neutralising systems for low energy beams, very little is known about the nature of beam plasmas and how their characteristics and capabilities depend on beam current, beam energy and beamline pressure. These issues have been addressed in a detailed scanning Langmuir probe study of the plasmas created in beams passing through the post-analysis section of a commercial, high current ion implanter. Combined with Faraday cup measurements of the rate of loss of beam current in the same region due to charge exchange and scattering collisions, the probe data have provided a valuable insight into the nature of the slow ion and electron production and loss processes. Two distinct electron energy distribution functions are observed with electron temperatures ≥ 25 V and around 1 eV. The fast electrons observed must be produced in their energetic state. By studying the properties of the beam plasma as a function of the beam and beamline parameters, information on the ways in which the plasma and the beam interact to reduce beam blow-up and retain a stable plasma has been obtained

Additional details

Identifiers

Publishing Information

Journal Title
AIP Conference Proceedings
Journal Volume
866
Journal Issue
1
Journal Page Range
p. 340-344
ISSN
0094-243X
CODEN
APCPCS

Conference

Title
16. international conference on ion implantation technology
Acronym
IIT 2006
Dates
11-16 Jun 2006
Place
Marseille (France)

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
38056378
Subject category
S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; S70: PLASMA PHYSICS AND FUSION TECHNOLOGY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
BEAM CURRENTS; BEAM-PLASMA SYSTEMS; CATIONS; CHARGE EXCHANGE; ELECTRON TEMPERATURE; ELECTRONS; ENERGY SPECTRA; FARADAY CUPS; ION BEAMS; ION IMPLANTATION; LANGMUIR PROBE; PLASMA; SPACE CHARGE
Descriptors DEC
BEAM MONITORS; BEAMS; CHARGED PARTICLES; CURRENTS; ELECTRIC PROBES; ELEMENTARY PARTICLES; FERMIONS; IONS; LEPTONS; MEASURING INSTRUMENTS; MONITORS; PROBES; SPECTRA

Optional Information

Notes
(c) 2006 American Institute of Physics