Published January 1994
| Version v1
Journal article
Atomic displacement and total ionizing dose damage in semiconductors
Description
This paper deals with the basics of displacement and ionization damage in semiconductor materials and devices in order to get a qualitative and quantitative understanding of the mechanisms involved. This is a prerequisite to properly predicting the operational lifetime of a certain device in a specified space environment. (author)
Additional details
Publishing Information
- Journal Title
- Radiation Physics and Chemistry (1993)
- Journal Volume
- 43
- Journal Issue
- 1-2
- Journal Page Range
- p. 105-127.
- ISSN
- 0969-806X
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- United Kingdom
- INIS RN
- 25011339
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Descriptors DEI
- ATOMIC DISPLACEMENTS; INTERPLANETARY SPACE; IONIZATION; IONIZING RADIATIONS; SEMICONDUCTOR MATERIALS
- Descriptors DEC
- MATERIALS; PHYSICAL RADIATION EFFECTS; RADIATION EFFECTS; RADIATIONS; SPACE