Antibacterial, magnetic and dielectric properties of nano-structured V doped TiO2 thin films deposited by dip coating technique
- 1. Lahore College for Women University, Lahore, 54000 (Pakistan)
- 2. Centre of Excellence in Solid State Physics, University of the Punjab, Lahore, 54950 (Pakistan)
Description
Highlights: • V doped TiO2 dip coated thin films with V 1–9 at. wt. % were synthesized. • All thin films exhibited ferromagnetism. • The increase in vanadium percentage decreased the band gap of TiO2 thin films. • Dielectric properties are decreasing with increase in V doping percentage. • V doped TiO2 has tremendous antibacterial activity. In this paper, vanadium (V) doped TiO2 thin films with V doping percentage 1, 3, 5, 7, 9 at. wt. % were studied. The magnetic properties were evaluated by hysteresis recorded at room temperature. All thin films exhibited ferromagnetism. The increase in the V doping percentage deteriorated the crystallinity of the films with enhancement in the dislocation density and the residual stress. The SEM micrographs have shown effects of vanadium percentage on the thin film morphology, from scattered grains to agglomerated at higher doping concentrations. The optical analysis showed that increase in vanadium percentage has shown tremendous enhancement of transmittance in the visible region. Urbach equation was used to assess disorder inside the thin films. Dielectric properties are decreasing with increase in V doping percentage. V doped TiO2 has tremendous antibacterial activity against Staphylococcus, Pseudomonas, Escherichia coli and Klebsiella. V doped TiO2 thin films have interesting applications in the optical window for solar cells.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.matchemphys.2021.124659Additional details
Identifiers
- DOI
- 10.1016/j.matchemphys.2021.124659;
- PII
- S0254058421004429;
Publishing Information
- Journal Title
- Materials Chemistry and Physics (Print)
- Journal Volume
- 267
- Journal Page Range
- vp.
- ISSN
- 0254-0584
- CODEN
- MCHPDR
INIS
- Country of Publication
- Switzerland
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 54028130
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- DEPOSITS; DIELECTRIC PROPERTIES; DIP COATING; DISLOCATIONS; DOPED MATERIALS; ESCHERICHIA COLI; FERROMAGNETISM; MAGNETIC PROPERTIES; NANOSTRUCTURES; PSEUDOMONAS; RESIDUAL STRESSES; SCANNING ELECTRON MICROSCOPY; SOLAR CELLS; STAPHYLOCOCCUS; SYNTHESIS; THIN FILMS; TITANIUM OXIDES; TRANSMISSION ELECTRON MICROSCOPY
- Descriptors DEC
- BACTERIA; CHALCOGENIDES; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; DEPOSITION; DIRECT ENERGY CONVERTERS; ELECTRICAL PROPERTIES; ELECTRON MICROSCOPY; EQUIPMENT; FILMS; LINE DEFECTS; MAGNETISM; MATERIALS; MICROORGANISMS; MICROSCOPY; OXIDES; OXYGEN COMPOUNDS; PHOTOELECTRIC CELLS; PHOTOVOLTAIC CELLS; PHYSICAL PROPERTIES; SOLAR EQUIPMENT; STRESSES; SURFACE COATING; TITANIUM COMPOUNDS; TRANSITION ELEMENT COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2021 Elsevier B.V. All rights reserved.