Effect of X-ray doses on the electric field distribution in p⁺n Si pixel detector

Science requirements of the radiation hard p⁺n Si pixel detector are challenging for the next-generation photon science requirements. A high voltage radiation-hard Si p⁺n pixel detector is required for the long-term operation of the experiment and to get high charge collection efficiency. In this present work, we have studied the X-ray dose dependency on the E-field distribution at oxide-silicon interface in a p⁺n Si pixel detector using Cogenda (Visual) TCAD device simulator to get a high breakdown voltage. (author)