Published 2023
| Version v1
Book
Mixed field radiation measurement using MOSFET sensor
- 1. Nuclear Radiation Management and Applications Division, Defence Laboratory, DRDO, Jodhpur-342011(India)
Description
We report here a study performed on MOSFET (Metal Oxide Semiconductor Field Effect Transistor) sensor for the measurement of accumulated doses from mixed field radiations (especially gamma and fast neutron) environment such as nuclear detonation. The MOSFET sensor has shown its capability towards fast neutron dose measurement along with its well-known gamma dose measurement capabilities. The study results are helpful in the establishment of MOSFET as a Personal Dosimeter for Defence applications under mixed field radiation scenarios. The measured sensitivities for gamma and fast neutron dose measurements are 1.5 mV/cGy and 0.6 mV/cGy respectively. (author)
Additional details
Publishing Information
- Publisher
- University of Mysore
- Imprint Place
- Mysore (India)
- ISBN
- 978-81-952150-1-0
- Imprint Title
- Proceedings of the twenty third national symposium on radiation physics: innovations in radiation physics
- Imprint Pagination
- 820 p.
- Journal Page Range
- p. 687-690
Conference
- Title
- 23. national symposium on radiation physics - innovations in radiation physics
- Acronym
- NSRP-23
- Dates
- 19-21 Jan 2023
- Place
- Mysore (India)
INIS
- Country of Publication
- India
- Country of Input or Organization
- India
- INIS RN
- 55012951
- Subject category
- S61: RADIATION PROTECTION AND DOSIMETRY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- CMOS CIRCUITS; DOSE RATES; GAMMA RADIATION; MOSFET; PHYSICAL RADIATION EFFECTS; RADIATION DOSES
- Descriptors DEC
- DOSES; ELECTROMAGNETIC RADIATION; ELECTRONIC CIRCUITS; FIELD EFFECT TRANSISTORS; INTEGRATED CIRCUITS; IONIZING RADIATIONS; MICROELECTRONIC CIRCUITS; MOS TRANSISTORS; RADIATION EFFECTS; RADIATIONS; SEMICONDUCTOR DEVICES; TRANSISTORS