Surface barrier detectors made of silicon doped with phosphorus in the flux of thermal neutrons

The possibility of obtaining p-type Si surface-barrier detectors (SBD) doped with P in the thermal neutron flux is investigated. One of techniques for manifacturing large SBD using the method of p-type silicon recom ensation to n-type one by means of the 30Si(n,γ)31Siβ-/2.6hx31P nuclei reaction proceeding on thermal neutrons is set forth. Si crystals were irradiated in a vertical experimental channel of a research reactor. The thermal neutron flux density of the order of 2x1011 neutr./cm2xs, irradiation time equal to approximately 10 h. The radiation defects in irradiated samples were annealed in the air at 500-90 deg C during 1-3 h, The crystals prepared have specific resistance of 0,7-130 kOhmxcm. It is conclu= . ded that neutron-doped n-type silicon prepared from initial p-type monocrystals grown by the method of crucibleless zone melting can serve as material for manofactouring surface barrier Si(Au)-detectors of charged particles with parameters close to the standards of the les commercial specimens of n-type silicon SBD