Published June 2017
| Version v1
Journal article
Inverse Design of a SOI T-junction Polarization Beamsplitter
- 1. State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876 (China)
Description
A SOI T-junction polarization beamsplitter with an ultra-compact footprint of 2.8×2.8μm2 is designed based on the method of inverse design. Simulated results show that the conversion efficiencies for TE and TM lights are 73.34% (simulated insertion loss of 2dB) and 80.4% (simulated insertion loss of 1.7dB) at 1550nm, respectively; the simulated extinction ratios for TE and TM lights are 19.3dB and 13.99dB at 1558nm, respectively. (paper)
Availability note (English)
Available from http://dx.doi.org/10.1088/1742-6596/844/1/012009Additional details
Identifiers
Publishing Information
- Journal Title
- Journal of Physics. Conference Series (Online)
- Journal Volume
- 844
- Journal Issue
- 1
- Journal Page Range
- [3 p.]
- ISSN
- 1742-6596
Conference
- Title
- 6. conference on advances in optoelectronics and micro/nano-optics
- Dates
- 23-26 Apr 2017
- Place
- Nanjing (China)
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 49019199
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- DESIGN; ELECTRIC CONTACTS; ENERGY CONVERSION; ENERGY EFFICIENCY; ENERGY LOSSES; POLARIZATION; SEMICONDUCTOR JUNCTIONS; VISIBLE RADIATION
- Descriptors DEC
- CONVERSION; EFFICIENCY; ELECTRICAL EQUIPMENT; ELECTROMAGNETIC RADIATION; EQUIPMENT; LOSSES; RADIATIONS