Ionization of atoms sputtered from Asup(III)Bsup(V) compounds

Ionization probabilities of As, Ga and In atoms sputtered from GaAs and InAs are studied as a function of primary ion energies. The velocity distribution of ions and the effect of work-function changes on ionization probabilities are estimated qualitatively. The results are compared with theoretical predictions. The models based on the concept of a short-lived electron-hole plasma in the substrate seem to explain the data best. (orig.)