Published October 2013
| Version v1
Journal article
Gate-to-body tunneling current model for silicon-on-insulator MOSFETs
- 1. State Key Laboratory of Functional Material for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200250 (China)
Description
A gate-to-body tunneling current model for silicon-on-insulator (SOI) devices is simulated. As verified by the measured data, the model, considering both gate voltage and drain voltage dependence as well as image force-induced barrier low effect, provides a better prediction of the tunneling current and gate-induced floating body effect than the BSIMSOI4 model. A delayed gate-induced floating body effect is also predicted by the model. (interdisciplinary physics and related areas of science and technology)
Availability note (English)
Available from http://dx.doi.org/10.1088/1674-1056/22/10/108501Additional details
Identifiers
Publishing Information
- Journal Title
- Chinese Physics. B
- Journal Volume
- 22
- Journal Issue
- 10
- Journal Page Range
- [4 p.]
- ISSN
- 1674-1056
INIS
- Country of Publication
- China
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 46066917
- Subject category
- S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
- Descriptors DEI
- ELECTRIC POTENTIAL; ELECTRICAL INSULATORS; IMAGES; MOSFET; SILICON; SIMULATION; TUNNEL EFFECT
- Descriptors DEC
- ELECTRICAL EQUIPMENT; ELEMENTS; EQUIPMENT; FIELD EFFECT TRANSISTORS; MOS TRANSISTORS; SEMICONDUCTOR DEVICES; SEMIMETALS; TRANSISTORS