Published May 1988
| Version v1
Journal article
Spatial resolution limit for focused ion-beam lithography from secondary-electron energy measurements
Description
The energy distributions of secondary electrons emitted from silicon and other metals when bombarded by gallium, indium, or gold ions have been measured. With these data, a semiempirical theory then enables the effective range of the secondary electrons in a resist layer to be estimated. Typical values lie in the range 0.5--10 nm, and are in agreement with the measured spatial resolution limit for focused-ion-beam lithography
Additional details
Publishing Information
- Journal Title
- J. Vac. Sci. Technol., B
- Journal Volume
- 6
- Journal Issue
- 3
- Series
- J. Vac. Sci. Technol., B.
- Journal Page Range
- 986-988
- ISSN
- 0734-211X
- CODEN
- JVTBD
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 19074188
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- COLLISIONS; ELECTRON EMISSION; ENERGY SPECTRA; GALLIUM IONS; GOLD IONS; INDIUM IONS; ION COLLISIONS; ION IMPLANTATION; PRINTED CIRCUITS; SECONDARY EMISSION; SILICON
- Descriptors DEC
- ATOMIC IONS; CHARGED PARTICLES; ELECTRONIC CIRCUITS; ELEMENTS; EMISSION; IONS; SEMIMETALS; SPECTRA