Published April 2011
| Version v1
Journal article
Photoluminescence in MnIn2S4 single crystals
- 1. Inst. of Applied Physics, Academy of Sciences of Moldova, MD-2028, Chisinau (Moldova, Republic of)
- 2. Helmholtz-Zentrum Berlin fuer Materialien und Energie GmbH, Berlin, D-14109, Berlin (Germany)
Description
MnIn2S4 single crystals grown by the directional crystallization method were investigated by using the temperature and excitation power dependences of photoluminescence (PL) spectra. PL spectra consist of one broad band resulting from donor-acceptor pair recombination. The analysis of the temperature quenching of the PL intensity yields one defect level with a thermal ionization energy of about 0.17 eV. (authors)
Availability note (English)
Available online at http://sfm.asm.md/moldphys/Additional details
Identifiers
Publishing Information
- Journal Title
- Moldavian Journal of the Physical Sciences
- Journal Volume
- 10
- Journal Issue
- 2
- Journal Page Range
- p. 137-142
- ISSN
- 1810-648X
INIS
- Country of Publication
- Moldova, Republic of
- Country of Input or Organization
- Moldova, Republic of
- INIS RN
- 43053880
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- CRYSTAL STRUCTURE; CRYSTALLIZATION; EXCITATION; INDIUM COMPOUNDS; MANGANESE COMPOUNDS; MONOCRYSTALS; PHOTOLUMINESCENCE; SPECTRA; SULFIDES; SULFUR COMPOUNDS; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0000-0013 K; TEMPERATURE RANGE 0013-0065 K; TEMPERATURE RANGE 0065-0273 K; TEMPERATURE RANGE 0273-0400 K; X-RAY DIFFRACTION
- Descriptors DEC
- CHALCOGENIDES; COHERENT SCATTERING; CRYSTALS; DIFFRACTION; EMISSION; ENERGY-LEVEL TRANSITIONS; LUMINESCENCE; PHASE TRANSFORMATIONS; PHOTON EMISSION; SCATTERING; SULFUR COMPOUNDS; TEMPERATURE RANGE; TRANSITION ELEMENT COMPOUNDS
Optional Information
- Notes
- 19 refs., 4 figs.