Published 2002
| Version v1
Miscellaneous
Comparative analysis of the electrical parameters of self-made and commercially available RuO2-based thick film low-temperature sensors
Creators
- 1. Department of Electronics Fundamentals, Rzeszow University of Technology, Rzeszow (Poland)
Description
Resistance versus temperature behaviour of RuO2 + glass films produced from laboratory-prepared pastes have been studied in the range between 400 mK - 300 K and magnetic fields up to 5 Tesla. Comparative analysis of the sensitivities and magnetic field induced errors of self-made and commercially available RuO2-based thick film in low-temperature regime is presented. (author)
Additional details
Publishing Information
- Imprint Title
- Proceedings of 26. International Conference of International Microelectronics and Packaging Society - Poland Chapter IMAPS - Poland 2002
- Imprint Pagination
- 244 p.
- Journal Page Range
- p. 239-242
Conference
- Title
- 26. International Conference of International Microelectronics and Packaging Society - Poland Chapter IMAPS - Poland 2002
- Dates
- 25-27 Sep 2002
- Place
- Warsaw (Poland)
INIS
- Country of Publication
- Poland
- Country of Input or Organization
- Poland
- INIS RN
- 34074931
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference, Non-conventional Literature
- Descriptors DEI
- ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; FILMS; GLASS; MAGNETIC FIELDS; MAGNETORESISTANCE; RUTHENIUM OXIDES; SAMPLE PREPARATION; SENSITIVITY ANALYSIS; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0000-0013 K; TEMPERATURE RANGE 0013-0065 K; TEMPERATURE RANGE 0065-0273 K
- Descriptors DEC
- CHALCOGENIDES; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; REFRACTORY METAL COMPOUNDS; RUTHENIUM COMPOUNDS; TEMPERATURE RANGE; TRANSITION ELEMENT COMPOUNDS
Optional Information
- Notes
- 4 refs, 3 figs