Published September 1983
| Version v1
Journal article
A Theoretical Analysis of Epitaxial Growth of CuInS2 by Chemical Vapour Deposition
- 1. National Taiwan University - Taipei, Taiwan, R.o.C.
- 2. National Tsing Hua University-Hsin-chu, Taiwan,R.o.C.
Description
A theoretical analysis has been carried out to investigate the kinetics involved in the CVD growth of CuInS2. A stagnant-layer model is assumed for the numerical simulation. Computational results for the growth rate as a function of the substrate temperature, mean gas velocity and partial pressures in the reaction tube are obtained. This analysis indicates that the substrate temperature plays a dominant role in the growth rate, which is consistent with our experimental data
Additional details
Publishing Information
- Journal Title
- Nuovo Cim., D
- Journal Volume
- 2
- Journal Issue
- 6
- Series
- Nuovo Cim., D.
- Journal Page Range
- 1658-1663
Conference
- Title
- 5. International Conference on Ternary and Multinary Compounds.
- Dates
- 14-16 Sep 1982.
- Place
- Cagliari (Italy).
INIS
- Country of Publication
- Italy
- Country of Input or Organization
- Italy
- INIS RN
- 16003946
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- CHEMICAL VAPOR DEPOSITION; CRYSTAL GROWTH; KINETIC EQUATIONS; NUMERICAL SOLUTION; TEMPERATURE DEPENDENCE
- Descriptors DEC
- CHEMICAL COATING; DEPOSITION; EQUATIONS; SURFACE COATING