Auger electron spectroscopy and X-ray diffraction studies of Ti-Si layers synthesised by ion implantation

Ion implantation of (48Ti)+ ions into silicon substrates at 30 keV has been done and the resulting layers are investigated by Auger Electron Spectroscopy and Seeman-Bohlin X-ray diffraction. Presence of empty antibonding silicide states above the Fermi level put restrictions on the chemical information from AES in this system. In confirmation, we also do not observe any change in the line shape or shift in the energy position of Si(L2,3VV) transition. XRD results indicate the presence of almost all the titanium silicide phases in the as-implanted layers. Whereas, post implantation anneal at 5000C, for 30 min, transforms the silicide phases to Ti5Si4 phase. (author)