Published January 1998
| Version v1
Journal article
Formation of InAs quantum dots in a GaAs matrix during growth on misoriented substrates
Creators
- 1. Institute fuer Festkoerperphysik, Technische Universitaet Berlin, D-10623 Berlin (Germany)
- 2. Institute of Analytical Instrumentation, Russian Academy of Sciences, 198103 St. Petersburg (Russian Federation)
- 3. A.F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021 St. Petersburg (Russian Federation)
Description
The formation of InAs quantum dots grown by submonolayer migration-enhanced molecular-beam epitaxy on GaAs(100) surfaces with various misorientation angles and directions is investigated. It is shown for the deposition of 2 monolayers (ML) of InAs that increasing the misorientation angle above 3 deg. along the [010], [0subform(11)-bar], and [011] directions leads to the formation of several groups of quantum dots differing in geometric dimensions and electronic structure
Additional details
Identifiers
- DOI
- 10.1134/1.1187363;
- PII
- S1063-7826(98)02401-6;
Publishing Information
- Journal Title
- Semiconductors
- Journal Volume
- 32
- Journal Issue
- 1
- Journal Page Range
- p. 84-89
- ISSN
- 1063-7826
- CODEN
- SMICES
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 35051771
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Numerical Data, Translation
- Descriptors DEI
- EXPERIMENTAL DATA; GALLIUM ARSENIDES; INDIUM ARSENIDES; INTERFACES; LAYERS; MOLECULAR BEAM EPITAXY; QUANTUM DOTS; SEMICONDUCTOR MATERIALS; THIN FILMS
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; CRYSTAL GROWTH METHODS; DATA; EPITAXY; FILMS; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; INFORMATION; MATERIALS; NANOSTRUCTURES; NUMERICAL DATA; PNICTIDES
Optional Information
- Notes
- Translated from Fizika i Tekhnika Poluprovodnikov, ISSN 0015-3222, 32, 95-100 (January 1998); (c) 1998 American Institute of Physics.