Heterostructures on the basis of indium arsenide with semi-insulating A2IIIB3VI compound layers

By the methods of current-voltage and voltage-capacity characteristics, and by the difference in potentials on the contact the electro-physical properties of heterostructures on the basis of indium arsenide with the layers of In2S3 and In1.3Ga0.7Te3 are studied. Monocrystal In2S3 layers are formed by the method of heterovalent substitution of arsenic by sulphur in indium arsenide, whereas In1.3Ga0.7Te3 layers are prepared by the 'hot wall' method during coevaporation of components in quasi-closed volume. It is shown that the level of electron enrichment of the near surface region of InAs is lowered in the investigated structures, and In2S3 and In1.3Ga0.7Te3 layers exhibit insulator properties. The mechanisms of current flow in In2S3 and In1.3Ga0.7Te3 layers are discussed. (author)